Company Micron and Sun have developed a flash memory capable of withstanding up to one million rewrite cycles of information, reports TG Daily. The manufactured now flash memory has a much lower life.
Micron has already begun to test the supply of flash memory produced by the new technology. Maximum capacity of the module - 32 gigabita. Its serial production will be launched in the first quarter of 2009.
Representatives of Micron stress that they have developed a flash memory ideally suited for use in areas that require high reliability storage. This, for example, storage systems, SSD-drives and industrial equipment.
Currently, average flash memory withstand at least 10 thousand cycles rewrite information. After that proper carrier is not guaranteed.
In the middle of this year, a Samsung and Sun announced a joint project to develop resistant to wear flash memory. It is expected that the flash memory will withstand five times more cycles rewrite information than existing models.
Subscribe to:
Post Comments (Atom)
No comments:
Post a Comment