IBM, Toshiba and AMD have shown 22-nanometer memory.

KommentariiPervy 22-nanometrovyy19.08.2008Kompaniya IBM has created the smallest cell pamyatiKompanii IBM, Toshiba and AMD at the International Electron Devices Meeting in San Francisco introduced the world's first cell memory SRAM, an in compliance with 22-nanometer technology, reports EE Times. It was first announced in late August this year.
Area 22-nanometer SRAM memory cell is 0128 square micrometers. Previously, the area of the smallest SRAM memory cell of 0274 square micrometers. Area cell SRAM processors Intel, performed on 45-nano tehprotsessu is 0346 square micrometers.
In a 22-nanometer SRAM memory cell transistors based on the type of FinFET, based on technology high-k/metal gate. The latter involves replacing silicon dioxide in the electrode shutter transistors alloy hafnium, which reduces the size of transistors.
About when to begin production of 22-nanometer memory, not reported. Instead, the developers stressed that the technology used in the manufacture of 22-nanometer memory cell, would potentially reduce its space to 0063 square micrometers.
SRAM memory is part of the processor. It serves as a temporary data storage, processing chip.