The company Samsung has developed the world's first chip RAM DDR3 memory capacity of four gigabita. It is made in compliance with 50-nanometer technology and will increase the amount of memory module up to 32 gigabytes. This was reported in the press releases.
For chetyrehgigabitnogo chip memory DDR3 voltage needed to 1,35 volts. This is 20 percent less than required for the work produced by the current memory chips DDR3.
Power 16-gigabaytnogo DDR3 modules on the basis of chetyrehgigabitnyh chips to 40 percent less energy use of similar modules that are based on the dvuhgigabitnyh chips.
Representatives of Samsung emphasize that chetyrehgigabitnye DDR3 memory chips can be used in the 16-gigabaytnyh server memory modules RDIMM. In addition, they can become the basis vosmigigabaytnyh memory for workstations, desktops and laptops.
In September 2008, Samsung announced dvuhgigabitnye of memory chips, made on 50-nanometer technology. Currently, line 50-nanometer chip RAM DDR3 company Samsung chip volume includes one, two and four gigabita.
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