Samsung created a memory of 40-nanometer production methods.

The company announced the Samsung memory chips DRAM-memory format DDR2, made in compliance with 40-nanometer production methods, reports Computerworld. They consume 30 percent less energy than a memory manufactured on 50-nanometer technology.
DDR2 memory chips and a capacity of one gigabit gigabaytny memory DDR2, created based on these chips have been certified to work with the chipset Intel GM45 Express. The main field of application of the new memory modules - notebooks.
Representatives of Samsung expects that the transition to 40-nanometer production methods will help halve the period that runs from the date of manufacture of the product prior to its entry into the market. Currently, he is two years.
Recall that a week ago the company introduced the Samsung chetyrehgigabitnye memory chips DDR3, established in compliance with 50-nanometer production methods. By the end of this year, Samsung plans to begin production of memory chips DDR3 volume two gigabita on 40-nanometer technology.
In gigabitah (Gb) is traditionally measured by the capacity of chips, which comprise the memory. The volume of the latter is measured in gigabytes (GB). One gigabyte gigabitam eight matches.